I. The Thermal Management Dilemma of High-Power Analog Chips: Why Do Traditional Materials Fall Short?
With the soaring power density of analog chips (such as in 5G base stations, automotive power modules, and AI accelerators), it has become normal for the heat flux density to exceed 1000 W/cm². Although traditional metallic materials (such as copper and aluminum) have a certain degree of thermal conductivity, they face three fatal shortcomings:

1. Insufficient Electrical Insulation: The metal substrate is prone to causing leakage current, which interferes with the integrity of the signal. The risk multiplies especially in high-voltage scenarios.
2. Mismatch of Thermal Expansion Coefficient: The thermal expansion coefficient of copper (16.5×10⁻⁶/K) is much higher than that of silicon (3×10⁻⁶/K). When there are temperature fluctuations, huge thermal stress is generated, leading to chip cracking or solder joint failure.
3. Poor Corrosion Resistance: In high-temperature and high-humidity environments or in acidic and alkaline environments, the oxidation and corrosion of metals will accelerate the decay of heat dissipation performance and shorten the service life of the devices.

II. The “Ultimate Solution” of Aluminum Nitride Ceramics: Four Core Technological Breakthroughs

1. Thermal Conductivity Outperforms Metals, with Heat Dissipation Efficiency Increased by 200%
   The theoretical thermal conductivity of aluminum nitride (AlN) reaches 320 W/m·K, and in practical applications, it is also stably between 170-260 W/m·K, which is 5-10 times that of aluminum oxide. It even surpasses the bulk heat dissipation efficiency of copper (about 400 W/m·K). The secret lies in its unique hexagonal crystal structure, which conducts heat efficiently through phonons, making it particularly suitable for high-transient power scenarios (such as pulsed heating of lidar).
2. “Perfect Thermal Expansion Match” with Silicon Chips
   The thermal expansion coefficient of AlN (4.5×10⁻⁶/K) is highly close to that of silicon (3×10⁻⁶/K). During the cycle from room temperature to 500℃, the interfacial thermal stress is reduced by 70%, completely eliminating the risk of chip delamination.
3. “Dual Protection” of Electrical Insulation and High-Voltage Resistance
   The dielectric strength of AlN is >15 kV/mm, and the volume resistivity is >10¹⁴Ω·cm. It can isolate the leakage current under a high voltage of 1000V and avoid signal crosstalk.
4. “Survival Expert” in Extreme Environments
   High Temperature Resistance: Its melting point is 2200℃, and it can work stably for a long time at a temperature of up to 800℃.
   Corrosion Resistance: It is almost immune to the erosion of strong acids (such as H₂SO₄), strong alkalis (such as NaOH), and molten metals (such as aluminum and copper).

Aluminum nitride ceramics, with their four-dimensional performance matrix of high thermal conductivity, low expansion, strong insulation, and corrosion resistance, precisely address the pain points of heat dissipation for high-power analog chips. For engineers, choosing AlN not only means a leap in heat dissipation efficiency but also a comprehensive optimization of system reliability, service life, and cost. With the maturity of the preparation technology and large-scale production, AlN ceramics are changing from a “high-end option” to a “must-have option”, setting the gold standard for the thermal management of next-generation electronic devices.